Energy Storage Science and Technology ›› 2017, Vol. 6 ›› Issue (6): 1340-.doi: 10.12028/j.issn.2095-4239.2017.0051

Previous Articles     Next Articles

Improvement of photovoltaic properties of bismuth ferrite film based solar cell using organic and inorganic interface layers

SUN Huajun 1,2, HONG Tingting1, LIU Xiaofang3, SUI Huiting2, LIU Pengdong1   

  1. 1School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, Hubei, China; 2Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, Shandong, China; 3School of Chemistry, Chemical Engineering and Life Sciences, Wuhan University of Technology, Wuhan 430070, Hubei, China
  • Received:2017-05-08 Revised:2017-05-12 Online:2017-11-01 Published:2017-11-01

PDF

363

Abstract:

BiFeO3 (BFO) thin films were prepared by sol-gel method and the pure phase BFO crystals were obtained by a layer-by-layer annealing process. Reduced graphene oxide (RGO) and octadecyltrichlorosilane (C18H37SiCl3, OTS) were used as interfacial modifiers to study the effect of various interfacial materials on the structure and photovoltaic property of BFO film based photovoltaic devices. The results show that the RGO can increase the device open circuit voltage (Voc, from 0.67 V to 0.84 V), but also significantly improve the fill factor (FF, from 0.664 to 0.965) and the photoelectric conversion efficiency (PCE, from 1.03 to 1.67). Though the OTS film cannot improve the FF and PCE, it is effective in improving the Voc (from 0.67 V to 1.15 V). The RGO and OTS modified layers have different effects on the photovoltaic performance of the BFO film.

Key words: BiFeO3, graphene oxide, OTS, interface modification, photovoltaic effect