Energy Storage Science and Technology ›› 2024, Vol. 13 ›› Issue (11): 3754-3763.doi: 10.19799/j.cnki.2095-4239.2024.0501

• Energy Storage Materials and Devices • Previous Articles     Next Articles

Impact of heat treatment temperature on the thermoelectric properties of cold-sintered SnSe

Jun DING1,2(), Lijie SHI2, Xiangbin CHEN3, Xiang QU3, Zhe CHENG1, Xiufen LI1(), Man JIANG2(), Zhiquan CHEN3, Hongyu WANG1   

  1. 1.School of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, China
    2.School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430070, Hubei, China
    3.Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430070, Hubei, China
  • Received:2024-06-04 Revised:2024-06-22 Online:2024-11-28 Published:2024-11-27
  • Contact: Xiufen LI, Man JIANG E-mail:dcyywl@outlook.com;lixiufen@qhu.edu.cn;jiangm@hust.edu.cn

Abstract:

SnSe thermoelectric materials are promising due to their low thermal conductivity, low cost, and environmental friendliness, making them a focus in thermoelectric research. This study explores the effects of heat treatment temperature on the thermoelectric properties of polycrystalline SnSe blocks prepared via hydrothermal synthesis and cold sintering. X-ray diffraction (XRD) analysis confirmed that the primary diffraction peaks of all samples corresponded with SnSe, while scanning electron microscopy (SEM) revealed a transformation from bulk to lamellar structures with reduced internal voids as annealing temperature increased. Positron annihilation spectroscopy indicated the presence of vacancy-type defects, such as VSe, VSn, VSnSe, and large vacancy clusters, which serve as phonon scattering centers, thereby reducing lattice thermal conductivity. As the annealing temperature rose, a decrease in voids and partial restoration of these defects lowered the potential barrier at grain boundaries, enhancing electrical conductivity. The electrical conductivity, power factor, and dimensionless thermoelectric figure of merit (ZT) increased consistently with higher annealing temperatures. At a test temperature of 773 K, the sample annealed at 500 ℃ exhibited an electrical conductivity (σ) of 4.1 × 103 S/m and a power factor of 3.71 μW/(cm·K2). Although thermal conductivity slightly increased with higher annealing temperatures due to reduced phonon scattering centers, the overall ZT value reached 0.7 for the 500 ℃ annealed sample, a 35.7% improvement compared to the unannealed sample. These findings demonstrate that the combination of cold sintering and heat treatment is highly effective for enhancing the thermoelectric performance of SnSe, providing a theoretical basis for the development of high-performance thermoelectric materials.

Key words: SnSe, cold sintering, heat treatment, power factor, thermoelectric merit value, positron annihilation

CLC Number: