Energy Storage Science and Technology ›› 2022, Vol. 11 ›› Issue (5): 1322-1330.doi: 10.19799/j.cnki.2095-4239.2021.0554

• Energy Storage Materials and Devices • Previous Articles     Next Articles

Effect of vacancy defects on thermal conductivity of single-layer graphene by molecular dynamics

Liangtao XIONG1(), Jifen WANG2(), Huaqing XIE2, Xuelai ZHANG1()   

  1. 1.Merchant Marine College, Shanghai Maritime University, Shanghai 201306, China
    2.School of Resources and Environmental Engineering, Shanghai Polytechnic University, Shanghai 201209, China
  • Received:2021-10-22 Revised:2021-11-18 Online:2022-05-05 Published:2022-05-07
  • Contact: Jifen WANG, Xuelai ZHANG E-mail:1063920501@qq.com;wangjifen@sspu.edu.cn;xlzhang@shmtu.edu.cn

Abstract:

A none-quilibrium molecular dynamics method was used to study the influence of defects on the thermal conductivity of single-layer graphene (SLG). The SLG model for different defect types includes single-vacancy and double-vacancy (DV) defects and establishes a defect concentration of 0.1%—0.5%. The model was verified using phonon density of states. Based on this model, defect concentration and temperature were adopted as variable conditions. Model thermal conductivity was simulated during the heat transfer process. The thermal conductivity of SLG for different defect types was compared, the results show that, at a temperature of 300 K, with increased defect concentration, the thermal conductivity of SLG decreases sharply. This trend of decreasing conductivity lessens when the defect ratio reaches 0.2%. When the DV defect concentration in SLG is 0.3%, thermal conductivity is 144.5 W/(m·K) for a temperature rise from 300 K to 700 K. The corresponding reduction in thermal conductivity is 26.4% of that at 300 K. Therefore, the thermal conductivity of SLG modulated by DV defects is less affected by temperature. The study provides a theoretical reference for the thermal management of real-world applications of SLG-based devices at micro- and nano-scales.

Key words: graphene, temperature, molecular dynamics, defect concentration, thermal conductivity

CLC Number: