Research progress of the regulation of nitrogen doping of graphene and the influence mechanism of supercapacitor capacitive performance

doi:10.19799/j.cnki.2095-4239.2020.0209

Abstract

Abstract:

Graphene is a material with excellent properties, but its applications (e.g., energy storage) are limited because of its few surface-active sites. Nitrogen atom doping is an effective method for improving graphene properties. Nitrogen doping methods can generally be divided into two categories: 1) direct-doping, which uses small molecules or gases as nitrogen and carbon sources to perform an in-situ synthesis of nitrogen-doped graphene (e.g., chemical vapor deposition, solvothermal, and arc discharge methods); and 2) post-synthesis, which uses graphene or graphene oxide as raw materials to achieve nitrogen doping (e.g., thermal method, chemical treatment, and plasma method). Nitrogen-doped graphene shows different physical and chemical properties because of the various structural types of nitrogen atom entering the graphene lattice. As the electrode material of supercapacitors, which are an important application of nitrogen-doped graphene, no unified scientific conclusion has yet been provided as regards the mechanism of nitrogen doping to improve the capacitive performance. This study briefly introduces the characteristics of various graphene nitrogen doping methods and reviews the research progress of nitrogen atom doping control methods with different configurations. The effects of the reaction temperature, precursor structure, reaction energy, and nitrogen doping amount on the formation of the pyrrole-, pyridine-, and graphite-type doped nitrogen with different configurations are reviewed. Some main viewpoints on the influence mechanism of the pyrrole-, pyridine-, and graphite-type doped nitrogen on the capacitance characteristics of graphene are summarized. Finally, the future research direction of nitrogen-doped graphene is previewed.

Key words: nitrogen doping of grapheme, configurations of doped nitrogen, regulation method, supercapacitors, mechanism

CLC Number:

O 646

Rixin LAI, Chuanjian JIANG, Lin LIU, Wenfeng ZHANG, Yu XIANG, Hai MING, Hao ZHANG, Gaoping CAO, Yun DU. Research progress of the regulation of nitrogen doping of graphene and the influence mechanism of supercapacitor capacitive performance[J]. Energy Storage Science and Technology, 2020, 9(6): 1657-1667.

Figures/Tables 4

References 66

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